完整後設資料紀錄
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dc.contributor.authorChang, Sheng-Chiehen_US
dc.contributor.authorChen, Chien-Chihen_US
dc.contributor.authorChang, Tsu-Chien_US
dc.contributor.authorLin, Kun-Linen_US
dc.contributor.authorLu, Tien-Changen_US
dc.contributor.authorChang, Lien_US
dc.contributor.authorWu, YewChung Sermonen_US
dc.date.accessioned2016-03-28T00:04:14Z-
dc.date.available2016-03-28T00:04:14Z-
dc.date.issued2015-01-01en_US
dc.identifier.issn2162-8769en_US
dc.identifier.urihttp://dx.doi.org/10.1149/2.0201512jssen_US
dc.identifier.urihttp://hdl.handle.net/11536/129448-
dc.description.abstractPeriodic pyramidal array patterned sapphire substrate (PSS) with various inclined facets was fabricated by wet etching. It was found that {3 (4) over bar 17}, {4 (1) over bar(3) over bar 18}, and {12 (3) over bar5} facets are exposed on the PSS structure after etching. GaN grown on the PSS by metal-organic chemical vapor deposition was found to have a semi-polar orientation by structural characterization with scanning and transmission electron microscopy. Also, the results show that GaN is mainly grown on the {12 (3) over bar5} sapphire facet with the orientation relationship between GaN and sapphire as(01 (1) over bar(4) over bar)(GaN) // (3 (3) over bar0 (6) over bar)(sapphire) and [02 (2) over bar1](GaN) // [11 (2) over bar0](sapphire), and the dislocation density in the grown GaN decreased with thickness. In addition, photoluminescence and catholuminescence measurements show only strong near-band-edge emission from the semi-polar GaN on the {12 (3) over bar5} sapphire facet. (C) 2015 The Electrochemical Society. All rights reserved.en_US
dc.language.isoen_USen_US
dc.titleGrowth of GaN on Patterned Sapphire Substrate with High-Index Facetsen_US
dc.typeArticleen_US
dc.identifier.doi10.1149/2.0201512jssen_US
dc.identifier.journalECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGYen_US
dc.citation.issue12en_US
dc.citation.spageR159en_US
dc.citation.epageR161en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000364764700028en_US
dc.citation.woscount0en_US
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