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dc.contributor.authorYang, Li-Weien_US
dc.contributor.authorTsai, Yi-Chiaen_US
dc.contributor.authorLi, Yimingen_US
dc.contributor.authorHigo, Aikoen_US
dc.contributor.authorMurayama, Akihiroen_US
dc.contributor.authorSamukawa, S.en_US
dc.contributor.authorVoskoboynikov, O.en_US
dc.date.accessioned2019-04-03T06:45:06Z-
dc.date.available2019-04-03T06:45:06Z-
dc.date.issued2015-12-15en_US
dc.identifier.issn2469-9950en_US
dc.identifier.urihttp://dx.doi.org/10.1103/PhysRevB.92.245423en_US
dc.identifier.urihttp://hdl.handle.net/11536/129534-
dc.description.abstractWe theoretically study the impact of changes in surroundings on the electron ground-state effective g factor in defect-free GaAs/AlGaAs nanodisks. To perform the study, we formulate and deploy a computational efficient full three-dimensional model to describe the effective g-factor tensor in semiconductor nano-objects of complex geometry and material content. This model is based on an effective 2 x 2 conduction-band Hamiltonian which includes the Rashba and Dresselhaus spin-orbit couplings. The description is suited to clarify the important question of the controllability of the electron effective g factor in semiconductor nano-objects. The results of this theoretical study suggest that in the defect-free GaAs/AlGaAs nanodisks, the effective g factor can be tuned within a wide range by proper design of the nanodisk environment. The zz components of the electron effective g-factor tensor obtained in our simulation are in good agreement with some recent experimental observations.en_US
dc.language.isoen_USen_US
dc.titleTuning of the electron g factor in defect-free GaAs nanodisksen_US
dc.typeArticleen_US
dc.identifier.doi10.1103/PhysRevB.92.245423en_US
dc.identifier.journalPHYSICAL REVIEW Ben_US
dc.citation.volume92en_US
dc.citation.issue24en_US
dc.citation.spage0en_US
dc.citation.epage0en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.department電機工程學系zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.contributor.departmentDepartment of Electrical and Computer Engineeringen_US
dc.identifier.wosnumberWOS:000366496300005en_US
dc.citation.woscount3en_US
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