完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Yang, Li-Wei | en_US |
dc.contributor.author | Tsai, Yi-Chia | en_US |
dc.contributor.author | Li, Yiming | en_US |
dc.contributor.author | Higo, Aiko | en_US |
dc.contributor.author | Murayama, Akihiro | en_US |
dc.contributor.author | Samukawa, S. | en_US |
dc.contributor.author | Voskoboynikov, O. | en_US |
dc.date.accessioned | 2019-04-03T06:45:06Z | - |
dc.date.available | 2019-04-03T06:45:06Z | - |
dc.date.issued | 2015-12-15 | en_US |
dc.identifier.issn | 2469-9950 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1103/PhysRevB.92.245423 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/129534 | - |
dc.description.abstract | We theoretically study the impact of changes in surroundings on the electron ground-state effective g factor in defect-free GaAs/AlGaAs nanodisks. To perform the study, we formulate and deploy a computational efficient full three-dimensional model to describe the effective g-factor tensor in semiconductor nano-objects of complex geometry and material content. This model is based on an effective 2 x 2 conduction-band Hamiltonian which includes the Rashba and Dresselhaus spin-orbit couplings. The description is suited to clarify the important question of the controllability of the electron effective g factor in semiconductor nano-objects. The results of this theoretical study suggest that in the defect-free GaAs/AlGaAs nanodisks, the effective g factor can be tuned within a wide range by proper design of the nanodisk environment. The zz components of the electron effective g-factor tensor obtained in our simulation are in good agreement with some recent experimental observations. | en_US |
dc.language.iso | en_US | en_US |
dc.title | Tuning of the electron g factor in defect-free GaAs nanodisks | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1103/PhysRevB.92.245423 | en_US |
dc.identifier.journal | PHYSICAL REVIEW B | en_US |
dc.citation.volume | 92 | en_US |
dc.citation.issue | 24 | en_US |
dc.citation.spage | 0 | en_US |
dc.citation.epage | 0 | en_US |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | 電機工程學系 | zh_TW |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.contributor.department | Department of Electrical and Computer Engineering | en_US |
dc.identifier.wosnumber | WOS:000366496300005 | en_US |
dc.citation.woscount | 3 | en_US |
顯示於類別: | 期刊論文 |