標題: The understanding on the evolution of stress-induced gate leakage in high-k dielectric metal-oxide-field-effect transistor by random-telegraph-noise measurement
作者: Hsieh, E. R.
Chung, Steve S.
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 14-十二月-2015
摘要: The evolution of gate-current leakage path has been observed and depicted by RTN signals on metal-oxide-silicon field effect transistor with high-k gate dielectric. An experimental method based on gate-current random telegraph noise (I-g-RTN) technique was developed to observe the formation of gate-leakage path for the device under certain electrical stress, such as Bias Temperature Instability. The results show that the evolution of gate-current path consists of three stages. In the beginning, only direct-tunnelling gate current and discrete traps inducing I-g-RTN are observed; in the middle stage, interaction between traps and the percolation paths presents a multi-level gate-current variation, and finally two different patterns of the hard or soft breakdown path can be identified. These observations provide us a better understanding of the gate-leakage and its impact on the device reliability. (C) 2015 AIP Publishing LLC.
URI: http://dx.doi.org/10.1063/1.4938142
http://hdl.handle.net/11536/129535
ISSN: 0003-6951
DOI: 10.1063/1.4938142
期刊: APPLIED PHYSICS LETTERS
Volume: 107
Issue: 24
顯示於類別:期刊論文