Fabricating a n(+)-Ge contact with ultralow specific contact resistivity by introducing a PtGe alloy as a contact metal (vol 107, 113503, 2015)

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Hsu, C. C.	en_US
dc.contributor.author	Chou, C. H.	en_US
dc.contributor.author	Wang, S. Y.	en_US
dc.contributor.author	Chi, W. C.	en_US
dc.contributor.author	Chien, C. H.	en_US
dc.contributor.author	Luo, G. L.	en_US
dc.date.accessioned	2016-03-28T00:04:19Z	-
dc.date.available	2016-03-28T00:04:19Z	-
dc.date.issued	2015-12-07	en_US
dc.identifier.issn	0003-6951	en_US
dc.identifier.uri	http://dx.doi.org/10.1063/1.4937124	en_US
dc.identifier.uri	http://hdl.handle.net/11536/129540	-
dc.description.abstract		en_US
dc.language.iso	en_US	en_US
dc.title	Fabricating a n(+)-Ge contact with ultralow specific contact resistivity by introducing a PtGe alloy as a contact metal (vol 107, 113503, 2015)	en_US
dc.type	Correction	en_US
dc.identifier.doi	10.1063/1.4937124	en_US
dc.identifier.journal	APPLIED PHYSICS LETTERS	en_US
dc.citation.volume	107	en_US
dc.citation.issue	23	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000367010800073	en_US
dc.citation.woscount	0	en_US
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