完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Wei, Ching-Hsuan | en_US |
dc.contributor.author | Cheng, Chiu-Ping | en_US |
dc.contributor.author | Lin, Hong-Cheu | en_US |
dc.contributor.author | Pi, Tun-Wen | en_US |
dc.date.accessioned | 2016-03-28T00:04:20Z | - |
dc.date.available | 2016-03-28T00:04:20Z | - |
dc.date.issued | 2015-12-01 | en_US |
dc.identifier.issn | 0169-4332 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1016/j.apsusc.2015.09.221 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/129559 | - |
dc.description.abstract | The electronic structure of rubrene doped with various concentrations of Na was studied by synchrotronradiation photoemission. Three stages of development were found with increasing Na concentration; Na penetrating deep into the organic film, followed by development of gap states, and ended with a metallic Na film. The charge transfer from Na to rubrene resulted in a vacuum-level shift. By doping Na into rubrene, we could control the IP of the organic molecule, which is favorable for application in organic semiconductor devices. (C) 2015 Elsevier B.V. All rights reserved. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | Rubrene | en_US |
dc.subject | Sodium | en_US |
dc.subject | Synchrotron radiation photoemission | en_US |
dc.title | Interfacial electronic structure of Na deposited on rubrene thin film studied by synchrotron radiation photoemission | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1016/j.apsusc.2015.09.221 | en_US |
dc.identifier.journal | APPLIED SURFACE SCIENCE | en_US |
dc.citation.volume | 357 | en_US |
dc.citation.spage | 2255 | en_US |
dc.citation.epage | 2259 | en_US |
dc.contributor.department | 材料科學與工程學系 | zh_TW |
dc.contributor.department | Department of Materials Science and Engineering | en_US |
dc.identifier.wosnumber | WOS:000366219700121 | en_US |
dc.citation.woscount | 0 | en_US |
顯示於類別: | 期刊論文 |