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dc.contributor.authorWei, Ching-Hsuanen_US
dc.contributor.authorCheng, Chiu-Pingen_US
dc.contributor.authorLin, Hong-Cheuen_US
dc.contributor.authorPi, Tun-Wenen_US
dc.date.accessioned2016-03-28T00:04:20Z-
dc.date.available2016-03-28T00:04:20Z-
dc.date.issued2015-12-01en_US
dc.identifier.issn0169-4332en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.apsusc.2015.09.221en_US
dc.identifier.urihttp://hdl.handle.net/11536/129559-
dc.description.abstractThe electronic structure of rubrene doped with various concentrations of Na was studied by synchrotronradiation photoemission. Three stages of development were found with increasing Na concentration; Na penetrating deep into the organic film, followed by development of gap states, and ended with a metallic Na film. The charge transfer from Na to rubrene resulted in a vacuum-level shift. By doping Na into rubrene, we could control the IP of the organic molecule, which is favorable for application in organic semiconductor devices. (C) 2015 Elsevier B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectRubreneen_US
dc.subjectSodiumen_US
dc.subjectSynchrotron radiation photoemissionen_US
dc.titleInterfacial electronic structure of Na deposited on rubrene thin film studied by synchrotron radiation photoemissionen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.apsusc.2015.09.221en_US
dc.identifier.journalAPPLIED SURFACE SCIENCEen_US
dc.citation.volume357en_US
dc.citation.spage2255en_US
dc.citation.epage2259en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000366219700121en_US
dc.citation.woscount0en_US
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