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dc.contributor.authorChou, Bo-Tsunen_US
dc.contributor.authorChou, Yu-Hsunen_US
dc.contributor.authorWu, Yen-Moen_US
dc.contributor.authorChung, Yi-Chengen_US
dc.contributor.authorHsueh, Wei-Jenen_US
dc.contributor.authorLin, Shih-Weien_US
dc.contributor.authorLu, Tien-Changen_US
dc.contributor.authorLin, Tzy-Rongen_US
dc.contributor.authorLin, Sheng-Dien_US
dc.date.accessioned2019-04-03T06:44:33Z-
dc.date.available2019-04-03T06:44:33Z-
dc.date.issued2016-01-27en_US
dc.identifier.issn2045-2322en_US
dc.identifier.urihttp://dx.doi.org/10.1038/srep19887en_US
dc.identifier.urihttp://hdl.handle.net/11536/129655-
dc.description.abstractSignificant advances have been made in the development of plasmonic devices in the past decade. Plasmonic nanolasers, which display interesting properties, have come to play an important role in biomedicine, chemical sensors, information technology, and optical integrated circuits. However, nanoscale plasmonic devices, particularly those operating in the ultraviolet regime, are extremely sensitive to the metal and interface quality. Thus, these factors have a significant bearing on the development of ultraviolet plasmonic devices. Here, by addressing these material-related issues, we demonstrate a low-threshold, high-characteristic-temperature metal-oxide-semiconductor ZnO nanolaser that operates at room temperature. The template for the ZnO nanowires consists of a flat single-crystalline Al film grown by molecular beam epitaxy and an ultrasmooth Al2O3 spacer layer synthesized by atomic layer deposition. By effectively reducing the surface plasmon scattering and metal intrinsic absorption losses, the high-quality metal film and the sharp interfaces formed between the layers boost the device performance. This work should pave the way for the use of ultraviolet plasmonic nanolasers and related devices in a wider range of applications.en_US
dc.language.isoen_USen_US
dc.titleSingle-crystalline aluminum film for ultraviolet plasmonic nanolasersen_US
dc.typeArticleen_US
dc.identifier.doi10.1038/srep19887en_US
dc.identifier.journalSCIENTIFIC REPORTSen_US
dc.citation.volume6en_US
dc.citation.spage0en_US
dc.citation.epage0en_US
dc.contributor.department照明與能源光電研究所zh_TW
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentInstitute of Lighting and Energy Photonicsen_US
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000368670000001en_US
dc.citation.woscount23en_US
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