標題: GaN Layers on Si (111) from Nanocolumns to Nanorods by Plasma-Assisted Molecular Beam Epitaxy
作者: Yu, Ing-Song
Liang, Wen-Han
Yang, Dian-Long
Yang, Chung-Pei
Chang, Chun-Pu
Lin, Chun-Ting
Chen, Chun-Chi
光電系統研究所
Institute of Photonic System
關鍵字: Molecular Beam Epitaxy;Gallium Nitride;Nanoculumns;Nanorods
公開日期: 1-十月-2015
摘要: In this report, the characterization of GaN layers grown on p-type Si (111) substrate by plasma-assisted molecular beam epitaxy was investigated. For different growth temperatures (750 degrees C, 800 degrees C and 850 degrees C) and N/Ga flux ratios (0.26, 0.46 and 0.92), we can find the GaN layers transition from nanocolumns to nanorods structures. During the epitaxy of GaN, nanocolumns in the thin films with poor crystal quality were obtained for the growth parameters of low substrate temperature or Ga-rich condition. However, the growth at high substrate temperature or N-rich condition formed GaN nanorods structure, and was beneficial to the crystallization of GaN layers with preferential orientation (0001). In the end, the possible growth mechanism of GaN nanocolumns and nanorods was discussed in the letter.
URI: http://dx.doi.org/10.1166/nnl.2015.2030
http://hdl.handle.net/11536/129725
ISSN: 1941-4900
DOI: 10.1166/nnl.2015.2030
期刊: NANOSCIENCE AND NANOTECHNOLOGY LETTERS
Issue: 10
起始頁: 828
結束頁: 833
顯示於類別:期刊論文