標題: Impact of Geometry Aspect Ratio on 10-nm Gate-All-Around Silicon-Germanium Nanowire Field Effect Transistors
作者: Chao, Pei-Jung
Li, Yiming
交大名義發表
分子醫學與生物工程研究所
電機資訊學士班
National Chiao Tung University
Institute of Molecular Medicine and Bioengineering
Undergraduate Honors Program of Electrical Engineering and Computer Science
公開日期: 1-一月-2014
摘要: In this paper, we study electrical characteristics of gate-all-around (GAA) silicon-germanium (SiGe) nanowire field effect transistors (NWFETS) with different aspect ratio (AR) of channel. Device characteristics: the subthreshold swing (SS), the drain induced barrier lowering (DIBL), and the I-ON/I-OFF ratio are simulated by using three-dimensional quantum mechanically corrected device simulation. Electrical characteristics of 10-nm-gate GAA Si1-xGex NWFET devices are explored with respect to different thickness of SiGe and Ge\'s mole fraction. It is investigated that an ellipse-shaped channel with a small aspect ratio possesses better DC characteristics, compared with the one which has large AR due to its good gate controllability.
URI: http://hdl.handle.net/11536/129766
ISBN: 978-1-4799-5622-7
ISSN: 
期刊: 2014 IEEE 14TH INTERNATIONAL CONFERENCE ON NANOTECHNOLOGY (IEEE-NANO)
起始頁: 452
結束頁: 455
顯示於類別:會議論文