標題: | Impact of Geometry Aspect Ratio on 10-nm Gate-All-Around Silicon-Germanium Nanowire Field Effect Transistors |
作者: | Chao, Pei-Jung Li, Yiming 交大名義發表 分子醫學與生物工程研究所 電機資訊學士班 National Chiao Tung University Institute of Molecular Medicine and Bioengineering Undergraduate Honors Program of Electrical Engineering and Computer Science |
公開日期: | 1-一月-2014 |
摘要: | In this paper, we study electrical characteristics of gate-all-around (GAA) silicon-germanium (SiGe) nanowire field effect transistors (NWFETS) with different aspect ratio (AR) of channel. Device characteristics: the subthreshold swing (SS), the drain induced barrier lowering (DIBL), and the I-ON/I-OFF ratio are simulated by using three-dimensional quantum mechanically corrected device simulation. Electrical characteristics of 10-nm-gate GAA Si1-xGex NWFET devices are explored with respect to different thickness of SiGe and Ge\'s mole fraction. It is investigated that an ellipse-shaped channel with a small aspect ratio possesses better DC characteristics, compared with the one which has large AR due to its good gate controllability. |
URI: | http://hdl.handle.net/11536/129766 |
ISBN: | 978-1-4799-5622-7 |
ISSN: | |
期刊: | 2014 IEEE 14TH INTERNATIONAL CONFERENCE ON NANOTECHNOLOGY (IEEE-NANO) |
起始頁: | 452 |
結束頁: | 455 |
顯示於類別: | 會議論文 |