以離子植入技術改善鍺超淺接面與超低接觸阻抗( II )

Title:	以離子植入技術改善鍺超淺接面與超低接觸阻抗( II ) Improving Ge-Based Shallow Junctions and Low Resistance Contact by Ion Implantation Technology( II )
Authors:	國立交通大學電子工程學系及電子研究所
Issue Date:	2015
Gov't Doc #:	MOST104-2622-E009-008-CC2
URI:	http://hdl.handle.net/11536/130127 https://www.grb.gov.tw/search/planDetail?id=11606547&docId=474534
Appears in Collections:	Research Plans

APA	(2015). 以離子植入技術改善鍺超淺接面與超低接觸阻抗( II ). https://www.grb.gov.tw/search/planDetail?id=11606547&docId=474534.
Bibtex	@article{2015以離子植入技術改善鍺超淺接面與超低接觸阻抗(, title={以離子植入技術改善鍺超淺接面與超低接觸阻抗( II )}, author={}, journal={https://www.grb.gov.tw/search/planDetail?id=11606547&docId=474534}, year={2015}, url={https://ir.lib.nycu.edu.tw/handle/11536/130127?locale=en&mode=simplelocale%3Den}, }