标题: 二维层状过渡金属硫化物于绿能及可挠式电子之应用
Applications of Two-Dimensional Transition Metal Dichalcogenides in Green/Flexible Electronics
作者: 侯拓宏
Hou Tuo-Hung
国立交通大学电子工程学系及电子研究所
关键字: 二维层狀过渡金属硫化物;超薄体电晶体;穿隧式电晶体;可挠式电子;Two-dimensional transition metal dichalcogenides;ultra-thin body FET;tunnel FET;flexible electronics
公开日期: 2015
摘要: 今日几乎所有电子元件皆利用三维(3D)半导体为材料,但自从石墨烯(Graphene)于2004年被发现后,电子元件的设计上有了另一种全新的材料选择:二维(2D)层狀材料,紧接着石墨烯之后,各式二维层狀材料如氮化硼(BN),二硫化钼 (MoS2)、二硫化钨(WS2)、二硒化钼(MoSe2)、二硒化钨 (WSe2),二硒化铌(NbSe2)亦被发展出來,这些材料因为本身的低维度特性,产生了许多前所未見的载子传输、光学、光电、电子自旋、机械结构等性质,为目前物理及材料界积极研究的重要領域,其中过渡金属硫化物(Transition Metal Dichalcogenides; TMD)因具备适当能隙,特别适合应用于固态电子元件中。但二维层狀TMD是否能取代或互补现有的三维晶体材料,提供电子元件与电路持续微缩的新动能,目前仍未有定論。本计画希望在“国科会吴大猷先生纪念奖研究计画”的鼓勵支持下,建立我们团队在新颖二维层狀TMD于低功耗綠能及可挠式电子元件应用的研究动能,将基础科学領域发展出的新材料与物理特性,导入固态电子工程領域应用,改善元件特性与功能性。
本计画规画以三年的时间投入包含高性能超薄体电晶体、垂直型穿隧式电晶体(TFET)、与可挠式光感应电晶体等重要固态电子元件开发。过去我们的研究团队在氧化物薄膜电晶体与可挠式电子元件开发上有丰富的经验,对我们快速进入此全新領域有很大的助益。我们已与中央研究院原子与分子科学研究所李連忠博士所領导的材料合成团队建立良好的合作夥伴关系,目前成功地在大面积二硫化钼与二硒化钨上制作出具良好特性之n型与p型TMD超薄体电晶体,具有高于六个數量级的电流开关比,在此基础上,我们将系统性地研究如何提升可应用于未來綠能电子中的TMD超薄体电晶体特性。我们也将研究利用TMD異质接面结构的垂直型穿隧式电晶体,期待能较传统场效电晶体在功耗与性能上皆有所提升。我们也将利用二维层狀TMD适合移转至任意基板的优点,开发其在可挠式电子,例如光感应式非接触互动萤幕等应用。
Today almost all electronic devices are made of three-dimensional (3D) semiconductors. However, since the first discovery of graphene in 2004, another new class of materials emerged: two-dimensional (2D) layered material. Various 2D layered materials, such as BN, MoS2, WS2, MoSe2, WSe2, NbSe2, etc. were discovered soon after graphene. Because of the intrinsic low-dimensional characteristics, unprecedented transport, optical, electro-optical, electron spin, and mechanical properties have attracted great attention among the research community of physics and material science. In particular, transition metal dichalcogenides (TMDs) are suitable for the electronic applications because of their moderate bandgap values. However, whether the 2D TMDs can replace or supplement the present 3D semiconductors to continue the device scaling trend is still uncertain. Supported by the NSC Ta-You Wu Memorial Award, this project aims to establish the new research momentum of our team in 2D TMDs focusing on their applications on low-power green electronics and flexible electronics. Leveraging the newly discovered material and physical properties in fundamental science, 2D TMDs will be applied to further improve the performance and functionality of solid-state devices.
This three-year project will develop critical solid-state device technology including high-performance ultra-thin body (UTB) FET, vertical tunnel FET (TFET), flexible photo-sensitive FET, etc. In this new research arena, our research team is greatly benefited from our extensive experience in developing oxide-based thin-film transistors and flexible electronics. Furthermore, we have established a mutual cooperation with the 2D TMD synthesis group led by Dr. Lain-Jong Li in the Institute of Atomic and Molecular Sciences, Academia Sinica and successfully fabricated n-type and p-type TMD UTB-FETs with a current on/off ratio greater than six orders of magnitudes on the large-area 2D MoS2 and WSe2, respectively. We will continue improving the characteristics of the TMD UTB devices in a symmetric manner. Additionally, we will investigate the vertical tunnel FET based on the TMD heterogeneous junctions to simultaneously reduce the power consumption and increase device performance as compared with the conventional FET. Utilizing the easy transfer properties of 2D TMDs to arbitrary substrates, we will also explore their new applications on flexible electronics including the photo-sensitive proximity interactive display.
官方说明文件#: MOST103-2221-E009-221-MY3
URI: http://hdl.handle.net/11536/130483
https://www.grb.gov.tw/search/planDetail?id=11268640&docId=454533
显示于类别:Research Plans