| 標題: | SiHx (x=1-4)矽薄膜沉積的天然氣表面反應 Gas-Surface Reactions of SiHx (X=1-4) in Si-Thin Film Deposition |
| 作者: | 布力汗 Putikam Raghunath 國立交通大學應用化學系（所） |
| 公開日期: | 2015 |
| 官方說明文件#: | MOST103-2113-M009-011-MY2 |
| URI: | http://hdl.handle.net/11536/130531 https://www.grb.gov.tw/search/planDetail?id=11275664&docId=456412 |
| Appears in Collections: | Research Plans |
- SiHx (x=1-4)矽薄膜沉積的天然氣表面反應 / 布力汗;Putikam Raghunath
- A computational study on the adsorption configurations and reactions of SiHx(x=1-4) on clean and H-covered Si(100) surfaces / Le, Thong N-M;Raghunath, P.;Huynh, Lam K.;Lin, M. C.
- Ab Initio Chemical Kinetics for SiHx Reactions with Si2Hy (x=1,2,3,4; y=6,5,4,3; x plus y=7) under a-Si:H CVD Condition / Trong-Nghia Nguyen;Lin, M. C.
- Computational Investigation of the Adsorption and Reactions of SiHx (x=0-4) on TiO2 Anatase (101) and Rutile (110) Surfaces / Huang, Wen-Fei;Chen, Hsin-Tsung;Lin, M. C.
- Ab Initio Chemical Kinetics for SiH(3) Reactions with Si(x)H(2x+2) (x=1-4) / Raghunath, P.;Lin, M. C.
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