新穎三五族通道與源極/汲極結構之研發與其應用於次14奈米互補式金氧半場效電晶體之製作

Full metadata record

DC Field	Value	Language
dc.date.accessioned	2016-03-29T00:00:58Z	-
dc.date.available	2016-03-29T00:00:58Z	-
dc.date.issued	2016	en_US
dc.identifier.govdoc	MOST104-2221-E009-060-MY3	zh_TW
dc.identifier.uri	http://hdl.handle.net/11536/130597	-
dc.identifier.uri	https://www.grb.gov.tw/search/planDetail?id=11565409&docId=467017	en_US
dc.description.sponsorship	科技部	zh_TW
dc.language.iso	zh_TW	en_US
dc.title	新穎三五族通道與源極/汲極結構之研發與其應用於次14奈米互補式金氧半場效電晶體之製作	zh_TW
dc.title	Development of Advanced Source/Drain Structure and Its Application on Sub-14nm III-V Channel Complementary Metal-Oxide-Semiconductor Field Effect Transistors	en_US
dc.type	Plan	en_US
dc.contributor.department	國立交通大學電子工程學系及電子研究所	zh_TW
Appears in Collections:	Research Plans