標題: | Characterization of Enhanced Stress Memorization Technique on nMOSFETs by Multiple Strain-Gate Engineering |
作者: | Lu, Tsung-Yi Chang, Tien-Shun Huang, Shih-An Chao, Tien-Sheng 電子物理學系 Department of Electrophysics |
關鍵字: | Mobility;n-channel metal-oxide-semiconductor field-effect transistors (nMOSFETs);strain |
公開日期: | 1-四月-2011 |
摘要: | To extend a carrier mobility improvement by strain engineering in high-density and small-gate-space complementary metal-oxide-semiconductor (CMOS) circuits, we have proposed a new stress memorization technique (SMT) that uses a strain proximity free technique (SPFT) to demonstrate the mobility improvement through multiple strain-gate engineering. The electron mobility of n-channel metal-oxide-semiconductor (MOS) field-effect transistors with the SPFT exhibits a 14% increase over counterpart techniques. Compared with the conventional SMT, the SPFT avoids the limitation of the stressor volume for the performance improvement in high-density CMOS circuits. We also found that the preamorphous layer (PAL) gate structure in combination with the SPFT can improve the mobility further to 31% greater than standard devices. Moreover, an additional 30% mobility enhancement can be achieved by using a dynamic threshold-voltage MOS and combining the PAL gate structure with the SPFT, respectively. The gate-oxide reliability and the channel-hot-carrier reliability are also analyzed. Our results show a mobility improvement by the SPFT, a slightly increased gate leakage current, and degraded channel-hot-carrier reliability. |
URI: | http://dx.doi.org/10.1109/TED.2011.2107324 http://hdl.handle.net/11536/9060 |
ISSN: | 0018-9383 |
DOI: | 10.1109/TED.2011.2107324 |
期刊: | IEEE TRANSACTIONS ON ELECTRON DEVICES |
Volume: | 58 |
Issue: | 4 |
起始頁: | 1023 |
結束頁: | 1028 |
顯示於類別: | 期刊論文 |