Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.date.accessioned | 2016-03-29T00:01:00Z | - |
| dc.date.available | 2016-03-29T00:01:00Z | - |
| dc.date.issued | 2016 | en_US |
| dc.identifier.govdoc | MOST104-2221-E009-053-MY3 | zh_TW |
| dc.identifier.uri | http://hdl.handle.net/11536/130643 | - |
| dc.identifier.uri | https://www.grb.gov.tw/search/planDetail?id=11580182&docId=471079 | en_US |
| dc.description.sponsorship | 科技部 | zh_TW |
| dc.language.iso | zh_TW | en_US |
| dc.title | 電阻式記憶體陣列內新式可靠性效應與物理機制、統計分析量測及三度空間可靠性模擬 | zh_TW |
| dc.title | New Failure Modes, Statistical Characterization and 3D Reliability Physics Simulation in RRAM Array | en_US |
| dc.type | Plan | en_US |
| dc.contributor.department | 國立交通大學電子工程學系及電子研究所 | zh_TW |
| Appears in Collections: | Research Plans | |
