標題: 應用於平面與多閘極結構之奈米元件分析與模型研發以解析預測佈局與三維寄生效應對於高頻性能與寬頻雜訊之影響
A Comprehensive Characterization and Modeling of Layout Dependent Effects and 3-D Parasitics for RF Performance and Broadband Noise in Planar Bulk and Multi-Gate Nanoscale Device
作者: 郭治群
Guo Jyh-Chyurn
國立交通大學電子工程學系及電子研究所
公開日期: 2016
官方說明文件#: MOST104-2221-E009-116-MY3
URI: http://hdl.handle.net/11536/130798
https://www.grb.gov.tw/search/planDetail?id=11725991&docId=480655
Appears in Collections:Research Plans