| 標題: | 應用於平面與多閘極結構之奈米元件分析與模型研發以解析預測佈局與三維寄生效應對於高頻性能與寬頻雜訊之影響 A Comprehensive Characterization and Modeling of Layout Dependent Effects and 3-D Parasitics for RF Performance and Broadband Noise in Planar Bulk and Multi-Gate Nanoscale Device |
| 作者: | 郭治群 Guo Jyh-Chyurn 國立交通大學電子工程學系及電子研究所 |
| 公開日期: | 2016 |
| 官方說明文件#: | MOST104-2221-E009-116-MY3 |
| URI: | http://hdl.handle.net/11536/130798 https://www.grb.gov.tw/search/planDetail?id=11725991&docId=480655 |
| Appears in Collections: | Research Plans |
