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dc.contributor.author簡昭欣zh_TW
dc.contributor.authorChien Chao-Hsinen_US
dc.date.accessioned2016-03-29T00:01:08Z-
dc.date.available2016-03-29T00:01:08Z-
dc.date.issued2016en_US
dc.identifier.govdocMOST104-2221-E009-060-MY3zh_TW
dc.identifier.urihttp://hdl.handle.net/11536/130808-
dc.identifier.urihttps://www.grb.gov.tw/search/planDetail?id=11717670&docId=478539en_US
dc.description.sponsorship科技部zh_TW
dc.language.isozh_TWen_US
dc.title新穎三五族通道與源極/汲極結構之研發與其應用於次14奈米互補式金氧半場效電晶體之製作zh_TW
dc.titleDevelopment of Advanced Source/Drain Structure and Its Application on Sub-14nm III-V Channel Complementary Metal-Oxide-Semiconductor Field Effect Transistorsen_US
dc.typePlanen_US
dc.contributor.department國立交通大學電子工程學系及電子研究所zh_TW
Appears in Collections:Research Plans