標題: Numerical study on optimization of InGaN multi-quantum-well laser diodes with polarization-matched AlInGaN barrier layers
作者: Chen, Jun-Rong
Ko, Tsung-Shine
Su, Po-Yuan
Lu, Tien-Chang
Kuo, Hao-Chung
Kuo, Yen-Kuang
Wang, Shing-Chung
光電工程學系
Department of Photonics
關鍵字: AlInGaN;Laser diode;Simulation;Polarization
公開日期: 2009
摘要: The optical properties of InGaN multi-quantum-well laser diodes with different polarization-matched AlInGaN barrier layers have been investigated numerically by employing an advanced device simulation program. The use of quaternary polarization-matched AlInGaN barrier layers enhances the electron-hole wave function overlap due to the compensation of polarization charges between InGaN quantum well and AlInGaN barrier layer. According to the simulation results, it is found that among the polarization-matched quantum-well structures under study, lower threshold current and higher slope efficiency can be achieved simultaneously when the aluminum composition in AlInGaN barrier layers is about 10 similar to 15%. The optimal polarization-matched InGaN/AlInGaN laser diode shows lower threshold current and higher slope efficiency compared to conventional InGaN/InGaN laser diodes.
URI: http://hdl.handle.net/11536/13089
http://dx.doi.org/10.1117/12.808799
ISBN: 978-0-8194-7457-5
ISSN: 0277-786X
DOI: 10.1117/12.808799
期刊: PHYSICS AND SIMULATION OF OPTOELECTRONIC DEVICES XVII
Volume: 7211
Appears in Collections:Conferences Paper