標題: | Physical characterization of ZnO nanorods grown on Si from aqueous solution and annealed at various atmospheres |
作者: | Yang, CC Chen, SY Lee, HY 材料科學與工程學系 Department of Materials Science and Engineering |
公開日期: | 1-Nov-2005 |
摘要: | High-density ZnO nanorods were vertically grown on Si coated with ZnO film (ZnO/Si substrate) from aqueous solution at low temperatures. The ZnO nanorods after annealed in various atmospheres still present good c-axis crystalline character but exhibit remarkable differences in photoluminescence (PL) properties. Enhancement of PL properties due to N-2-atmosphere annealing for ultraviolet emission can be attributed to the reduction of defect density because the nonparamagnetic singly ionized state (N-) can easily occupy the oxygen vacancies as evidenced by Raman spectroscopy and electron paramagnetic resonance spectrometry. The extended x-ray absorption fine structure reveals that the annealing atmosphere shows no apparent influence on the deep-level defects of ZnO nanorods except that some ions are possibly trapped or adsorbed on the surface of the ZnO nanorods. (c) 2005 American Vacuum Society. |
URI: | http://dx.doi.org/10.1116/1.2102967 http://hdl.handle.net/11536/13113 |
ISSN: | 1071-1023 |
DOI: | 10.1116/1.2102967 |
期刊: | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B |
Volume: | 23 |
Issue: | 6 |
起始頁: | 2347 |
結束頁: | 2350 |
Appears in Collections: | Articles |
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