Very low noise RIF nMOSFETs on plastic by substrate thinning and wafer transfer

Abstract

A very low minimum noise figure (NFmin) of 1.2 dB and a high associated gain of 12.8 dB at 10 GHz were measured for six-finger, 0.18-mu m radio frequency (RF) metal-oxide semiconductor field-effect transistors mounted on insulating plastic following substrate-thinning (similar to 30 mu m) and wafer transfer. Before this process, the devices had a slightly better RF performance of 1.1-dB NFmin anda 13.7-dB associated gain. The small RF performance degradation of the active transistors transferred to plastic shows the potential of integrating electronics onto plastic.