完整後設資料紀錄
DC 欄位語言
dc.contributor.authorWang, WHen_US
dc.contributor.authorPeng, YRen_US
dc.contributor.authorKuo, CTen_US
dc.date.accessioned2014-12-08T15:18:10Z-
dc.date.available2014-12-08T15:18:10Z-
dc.date.issued2005-11-01en_US
dc.identifier.issn0925-9635en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.diamond.2005.08.053en_US
dc.identifier.urihttp://hdl.handle.net/11536/13129-
dc.description.abstractThis study investigates the growth mechanism of 1C compatible processes and to the feasibility of synthesizing networks of single-walled carbon nanotubes (SWNT-) at lower temperatures (similar to 610 degrees C) on Si wafer using microwave plasma chemical vapor deposition (MPCVD) with CH4 and H-2 as source gases. The effects of the buffer layer materials (ZnS-SiO2, Al2O3, AlON, and AlN) and process conditions on growth of carbon nanostructures with Co as catalyst were also examined, where the buffer layers and Co catalyst were deposited in sequence by physical vapor deposition (PVD), followed by H-plasma pretreatment before deposition of carbon nanostructures. Additionally, the morphologies and bonding structures of carbon nanostructures were characterized by field emission scanning electron microscopy (FESEM), high resolution transmission electron microscopy (HRTEM), and Raman Spectroscopy. Analytical results demonstrate that networks of SIANTs are more favorable to be synthesized by selecting proper buffer layer material (e.g., AION), and under higher temperatures, thinner catalyst thickness (e.g., 5 run) and lower CH4/H-2 ratio (e.g., 5/100 sccm/sccm). The networks of SWNTs can be fabricated at temperatures as low as similar to 610 degrees C by manipulating these parameters. In conclusion, the growth mechanism determines the conditions for the formation of nano-sized extrusions on catalyst particles surface. (c) 2005 Elsevier B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectbuffer layeren_US
dc.subjectnetworksen_US
dc.subjectsingle-walled carbon nanotubes (SWNTs)en_US
dc.subjectmicrowave plasma chemical vapor deposition (MPCVD)en_US
dc.titleEffects of buffer layer materials and process conditions on growth mechanisms of forming networks of SWNTs by microwave plasma chemical vapor depositionen_US
dc.typeArticle; Proceedings Paperen_US
dc.identifier.doi10.1016/j.diamond.2005.08.053en_US
dc.identifier.journalDIAMOND AND RELATED MATERIALSen_US
dc.citation.volume14en_US
dc.citation.issue11-12en_US
dc.citation.spage1906en_US
dc.citation.epage1910en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000233983600036-
顯示於類別:會議論文


文件中的檔案:

  1. 000233983600036.pdf

若為 zip 檔案,請下載檔案解壓縮後,用瀏覽器開啟資料夾中的 index.html 瀏覽全文。