完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Shie, JS | en_US |
dc.contributor.author | Hwang, TSD | en_US |
dc.date.accessioned | 2014-12-08T15:18:10Z | - |
dc.date.available | 2014-12-08T15:18:10Z | - |
dc.date.issued | 2005-11-01 | en_US |
dc.identifier.issn | 0034-6748 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1063/1.2133996 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/13136 | - |
dc.description.abstract | A narrow-band self-filtering (NBSF) GaAs photodiode has been fabricated by the LPE technique, where epilayers of high-low-high N doping were grown on a P-type substrate. By proper control of the thickness and doping concentration of each layer, it can be demonstrated that the fabricated NBSF detector has a spectral bandwidth as narrow as 315 angstrom at 880 nm peak wavelength. This means over 98% of the blue-side light is suppressible, indicating that the NBSF photodetector is a useful device for many applications where the suppression of high background light is necessary. (c) 2005 American Institute of Physics. | en_US |
dc.language.iso | en_US | en_US |
dc.title | Fabrication of narrow-band self-filtering GaAs photodetector by epitaxy | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1063/1.2133996 | en_US |
dc.identifier.journal | REVIEW OF SCIENTIFIC INSTRUMENTS | en_US |
dc.citation.volume | 76 | en_US |
dc.citation.issue | 11 | en_US |
dc.citation.epage | en_US | |
dc.contributor.department | 光電工程學系 | zh_TW |
dc.contributor.department | Department of Photonics | en_US |
dc.identifier.wosnumber | WOS:000233569800009 | - |
dc.citation.woscount | 0 | - |
顯示於類別: | 期刊論文 |