完整後設資料紀錄
| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.author | Zhang, DL | en_US |
| dc.contributor.author | Liu, SM | en_US |
| dc.contributor.author | Jing, XN | en_US |
| dc.contributor.author | Luo, JL | en_US |
| dc.contributor.author | Zhang, XG | en_US |
| dc.contributor.author | Wang, RJ | en_US |
| dc.contributor.author | Kang, N | en_US |
| dc.contributor.author | Chen, ZJ | en_US |
| dc.contributor.author | Lu, L | en_US |
| dc.contributor.author | Lin, JJ | en_US |
| dc.date.accessioned | 2014-12-08T15:18:12Z | - |
| dc.date.available | 2014-12-08T15:18:12Z | - |
| dc.date.issued | 2005-10-10 | en_US |
| dc.identifier.issn | 0217-9792 | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1142/S0217979205032450 | en_US |
| dc.identifier.uri | http://hdl.handle.net/11536/13168 | - |
| dc.description.abstract | The electrical resistivity, thermal conductivity, and thermopower of alpha-TiAl alloy samples with A1 content from 0 at.% to 10 at.% are measured from room temperature down to liquid helium temperature. It is found that with the increase in A1 content the single phonon scattering contribution to the resistivity remains nearly constant, but the multiphonon scattering contribution monotonously increases. This provides an alternative explanation of resistivity saturation to the shunt-resistor model. The Wiedemann-Ranz law holds for the whole temperature range, allowing the separation of the electron and phonon contributions to the thermal conductivity. The data from samples with different doping levels enable us to separate the band and the scattering terms in the thermopower. | en_US |
| dc.language.iso | en_US | en_US |
| dc.subject | electronic transport | en_US |
| dc.subject | resistivity saturation | en_US |
| dc.subject | separation of electron and phonon thermal conductivity | en_US |
| dc.title | Electronic transport properties of alpha-TiAl alloys | en_US |
| dc.type | Article | en_US |
| dc.identifier.doi | 10.1142/S0217979205032450 | en_US |
| dc.identifier.journal | INTERNATIONAL JOURNAL OF MODERN PHYSICS B | en_US |
| dc.citation.volume | 19 | en_US |
| dc.citation.issue | 25 | en_US |
| dc.citation.spage | 3869 | en_US |
| dc.citation.epage | 3895 | en_US |
| dc.contributor.department | 電子物理學系 | zh_TW |
| dc.contributor.department | 物理研究所 | zh_TW |
| dc.contributor.department | Department of Electrophysics | en_US |
| dc.contributor.department | Institute of Physics | en_US |
| dc.identifier.wosnumber | WOS:000233031600006 | - |
| dc.citation.woscount | 1 | - |
| 顯示於類別: | 期刊論文 | |

