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dc.contributor.authorZhang, DLen_US
dc.contributor.authorLiu, SMen_US
dc.contributor.authorJing, XNen_US
dc.contributor.authorLuo, JLen_US
dc.contributor.authorZhang, XGen_US
dc.contributor.authorWang, RJen_US
dc.contributor.authorKang, Nen_US
dc.contributor.authorChen, ZJen_US
dc.contributor.authorLu, Len_US
dc.contributor.authorLin, JJen_US
dc.date.accessioned2014-12-08T15:18:12Z-
dc.date.available2014-12-08T15:18:12Z-
dc.date.issued2005-10-10en_US
dc.identifier.issn0217-9792en_US
dc.identifier.urihttp://dx.doi.org/10.1142/S0217979205032450en_US
dc.identifier.urihttp://hdl.handle.net/11536/13168-
dc.description.abstractThe electrical resistivity, thermal conductivity, and thermopower of alpha-TiAl alloy samples with A1 content from 0 at.% to 10 at.% are measured from room temperature down to liquid helium temperature. It is found that with the increase in A1 content the single phonon scattering contribution to the resistivity remains nearly constant, but the multiphonon scattering contribution monotonously increases. This provides an alternative explanation of resistivity saturation to the shunt-resistor model. The Wiedemann-Ranz law holds for the whole temperature range, allowing the separation of the electron and phonon contributions to the thermal conductivity. The data from samples with different doping levels enable us to separate the band and the scattering terms in the thermopower.en_US
dc.language.isoen_USen_US
dc.subjectelectronic transporten_US
dc.subjectresistivity saturationen_US
dc.subjectseparation of electron and phonon thermal conductivityen_US
dc.titleElectronic transport properties of alpha-TiAl alloysen_US
dc.typeArticleen_US
dc.identifier.doi10.1142/S0217979205032450en_US
dc.identifier.journalINTERNATIONAL JOURNAL OF MODERN PHYSICS Ben_US
dc.citation.volume19en_US
dc.citation.issue25en_US
dc.citation.spage3869en_US
dc.citation.epage3895en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.department物理研究所zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.contributor.departmentInstitute of Physicsen_US
dc.identifier.wosnumberWOS:000233031600006-
dc.citation.woscount1-
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