電荷擷取式3D NAND快閃記憶體可靠性量測及氮化矽內儲存電荷傳輸模擬

Full metadata record

DC Field	Value	Language
dc.contributor.author	汪大暉	zh_TW
dc.date.accessioned	2016-12-20T03:56:52Z	-
dc.date.available	2016-12-20T03:56:52Z	-
dc.date.issued	2016	en_US
dc.identifier.govdoc	MOST105-2221-E009-128-MY3	zh_TW
dc.identifier.uri	https://www.grb.gov.tw/search/planDetail?id=11896852&docId=490322	en_US
dc.identifier.uri	http://hdl.handle.net/11536/131933	-
dc.description.abstract		zh_TW
dc.description.abstract		en_US
dc.description.sponsorship	科技部	zh_TW
dc.language.iso	zh_TW	en_US
dc.subject		zh_TW
dc.subject		en_US
dc.title	電荷擷取式3D NAND快閃記憶體可靠性量測及氮化矽內儲存電荷傳輸模擬	zh_TW
dc.title	3d V-Nand Reliability Characterization and Sin Charge Transport Simulation	en_US
dc.type	Plan	en_US
dc.contributor.department	國立交通大學電子工程學系及電子研究所	zh_TW
Appears in Collections:	Research Plans

APA	汪. (2016). 電荷擷取式3D NAND快閃記憶體可靠性量測及氮化矽內儲存電荷傳輸模擬. http://hdl.handle.net/11536/131933.
Bibtex	@article{2016電荷擷取式3D, title={電荷擷取式3D NAND快閃記憶體可靠性量測及氮化矽內儲存電荷傳輸模擬}, author={汪大暉 }, journal={http://hdl.handle.net/11536/131933}, year={2016}, url={https://ir.lib.nycu.edu.tw/handle/11536/131933?mode=full}, }