完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | 林炯源 | zh_TW |
dc.date.accessioned | 2016-12-20T03:56:54Z | - |
dc.date.available | 2016-12-20T03:56:54Z | - |
dc.date.issued | 2016 | en_US |
dc.identifier.govdoc | MOST105-2112-M009-013 | zh_TW |
dc.identifier.uri | https://www.grb.gov.tw/search/planDetail?id=11904190&docId=492402 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/131977 | - |
dc.description.abstract | zh_TW | |
dc.description.abstract | en_US | |
dc.description.sponsorship | 科技部 | zh_TW |
dc.language.iso | zh_TW | en_US |
dc.subject | zh_TW | |
dc.subject | en_US | |
dc.title | 「絕緣體/矽烯/絕緣體」接面的第一原理計算 | zh_TW |
dc.title | First-Principles Calculations of Insulator/Silicene/Insulator Junctions | en_US |
dc.type | Plan | en_US |
dc.contributor.department | 國立交通大學電子工程學系及電子研究所 | zh_TW |
顯示於類別: | 研究計畫 |