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dc.contributor.authorHsueh, THen_US
dc.contributor.authorSheu, JKen_US
dc.contributor.authorHuang, HWen_US
dc.contributor.authorChang, YHen_US
dc.contributor.authorOu-Yang, MCen_US
dc.contributor.authorKuo, HCen_US
dc.contributor.authorWang, SCen_US
dc.date.accessioned2014-12-08T15:18:19Z-
dc.date.available2014-12-08T15:18:19Z-
dc.date.issued2005-10-01en_US
dc.identifier.issn0021-4922en_US
dc.identifier.urihttp://dx.doi.org/10.1143/JJAP.44.7723en_US
dc.identifier.urihttp://hdl.handle.net/11536/13202-
dc.description.abstractln(0.25)Ga(0.75)N/GaN multiple quantum wells embedded in nanorods with diameters of 60-100nm were fabricated by inductively coupled plasma reactive ion etching with Cl(2)/Ar plasma. The strong optical emission of the nanorods, observed by micro-photoluminescence measurement at 80 K, reveals a large blue shift of about 90meV and an increase in photoluminescence intensity density of more than 17-fold, compared with that of the as-grown wafer under the same excitation power density of 80W/cm(2). These nanostructures have a high potential for application in efficient GaN-based vertical cavity emitters.en_US
dc.language.isoen_USen_US
dc.titleFabrication and characterization of In(0.25)Ga(0.75)N/GaN multiple quantum wells embedded in nanorodsen_US
dc.typeArticleen_US
dc.identifier.doi10.1143/JJAP.44.7723en_US
dc.identifier.journalJAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERSen_US
dc.citation.volume44en_US
dc.citation.issue10en_US
dc.citation.spage7723en_US
dc.citation.epage7725en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
Appears in Collections:Articles