以離子植入技術改善鍺超淺接面與超低接觸阻抗( III )

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	崔秉鉞	zh_TW
dc.contributor.author	林炯源	zh_TW
dc.date.accessioned	2016-12-20T03:56:59Z	-
dc.date.available	2016-12-20T03:56:59Z	-
dc.date.issued	2016	en_US
dc.identifier.govdoc	MOST105-2622-E009-002-CC2	zh_TW
dc.identifier.uri	https://www.grb.gov.tw/search/planDetail?id=11947538&docId=495373	en_US
dc.identifier.uri	http://hdl.handle.net/11536/132044	-
dc.description.abstract		zh_TW
dc.description.abstract		en_US
dc.description.sponsorship	科技部	zh_TW
dc.language.iso	zh_TW	en_US
dc.subject		zh_TW
dc.subject		en_US
dc.title	以離子植入技術改善鍺超淺接面與超低接觸阻抗( III )	zh_TW
dc.title	Improving Ge-Based Shallow Junctions and Low Resistance Contact by Ion Implantation Technology( III )	en_US
dc.type	Plan	en_US
dc.contributor.department	國立交通大學電子工程學系及電子研究所	zh_TW
顯示於類別：	研究計畫