高能隙三-五族半導體的研究

Full metadata record

DC Field	Value	Language
dc.contributor.author	李威儀	zh_TW
dc.date.accessioned	2016-12-20T03:57:05Z	-
dc.date.available	2016-12-20T03:57:05Z	-
dc.date.issued	1994	en_US
dc.identifier.govdoc	NSC83-0404-E009-008	zh_TW
dc.identifier.uri	https://www.grb.gov.tw/search/planDetail?id=110411&docId=17626	en_US
dc.identifier.uri	http://hdl.handle.net/11536/132142	-
dc.description.abstract		zh_TW
dc.description.abstract		en_US
dc.description.sponsorship	行政院國家科學委員會	zh_TW
dc.language.iso	zh_TW	en_US
dc.subject		zh_TW
dc.subject		en_US
dc.title	高能隙三-五族半導體的研究	zh_TW
dc.title	Reseach on High Band Gap III[ - V Semiconductor	en_US
dc.type	Plan	en_US
dc.contributor.department	國立交通大學電子物理研究所	zh_TW
Appears in Collections:	Research Plans