標題: High extraction efficiency GaN-based light-emitting diodes on embedded SiO2 nanorod array and nanoscale patterned sapphire substrate
作者: Huang, Hung-Wen
Huang, Jhi-Kai
Kuo, Shou-Yi
Lee, Kang-Yuan
Kuo, Hao-Chung
光電工程研究所
Institute of EO Enginerring
關鍵字: dislocations;gallium compounds;III-V semiconductors;light emitting diodes;nanolithography;reflectivity;transmission electron microscopy;wide band gap semiconductors
公開日期: 28-六月-2010
摘要: In this paper, GaN-based LEDs with a nanoscale patterned sapphire substrate (NPSS) and a SiO2 photonic quasicrystal (PQC) structure on an n-GaN layer using nanoimprint lithography are fabricated and investigated. The light output power of LED with a NPSS and a SiO2 PQC structure on an n-GaN layer was 48% greater than that of conventional LED. Strong enhancement in output power is attributed to better epitaxial quality and higher reflectance resulted from NPSS and PQC structures. Transmission electron microscopy images reveal that threading dislocations are blocked or bended in the vicinities of NPSS layer. These results provide promising potential to increase output power for commercial light emitting devices. (C) 2010 American Institute of Physics. [doi:10.1063/1.3456385]
URI: http://dx.doi.org/10.1063/1.3456385
http://hdl.handle.net/11536/149980
ISSN: 0003-6951
DOI: 10.1063/1.3456385
期刊: APPLIED PHYSICS LETTERS
Volume: 96
顯示於類別:期刊論文