完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | 李威儀 | zh_TW |
dc.date.accessioned | 2016-12-20T03:57:05Z | - |
dc.date.available | 2016-12-20T03:57:05Z | - |
dc.date.issued | 1994 | en_US |
dc.identifier.govdoc | NSC83-0404-E009-008 | zh_TW |
dc.identifier.uri | https://www.grb.gov.tw/search/planDetail?id=110411&docId=17626 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/132142 | - |
dc.description.abstract | zh_TW | |
dc.description.abstract | en_US | |
dc.description.sponsorship | 行政院國家科學委員會 | zh_TW |
dc.language.iso | zh_TW | en_US |
dc.subject | zh_TW | |
dc.subject | en_US | |
dc.title | 高能隙三-五族半導體的研究 | zh_TW |
dc.title | Reseach on High Band Gap III[ - V Semiconductor | en_US |
dc.type | Plan | en_US |
dc.contributor.department | 國立交通大學電子物理研究所 | zh_TW |
顯示於類別: | 研究計畫 |