| 標題: | 低溫成長之Si/SiGe元件之研究 Low Temperature Deposited Si/Sige Devices |
| 作者: | 張俊彥 交通大學電子研究所 |
| 關鍵字: | ; |
| 公開日期: | 1993 |
| 摘要: | |
| 官方說明文件#: | NSC82-0404-E009-233 |
| URI: | https://www.grb.gov.tw/search/planDetail?id=45958&docId=6596 http://hdl.handle.net/11536/132159 |
| Appears in Collections: | Research Plans |
- 高品質高敏感度之矽鍺奈米感測元件平台之開發 / 張國明;CHANG KOW-MING
- Effectiveness of Si thin buffer layer for selective SiGe epitaxial growth in recessed source and drain for pMOS / Chenga, P. L.;Liao, C. I.;Chien, C. C.;Yang, C. L.;Ting, S. F.
- Nanocone SiGe antireflective thin films fabricated by ultrahigh-vacuum chemical vapor deposition with in situ annealing / Chang, Yuan-Ming;Dai, Ching-Liang;Cheng, Tsung-Chieh;Hsu, Che-Wei
- 具有源極汲極應變矽鍺與嵌入式矽鍺通道之28奈米和下世代P型金氧半場效電晶體特性之研究 / 游明華;Yu, Ming-Hua;鄭晃忠;Cheng, Huang-Chung
- The effect of native oxide on epitaxial SiGe from deposited amorphous Ge on Si / Wu, YH;Chen, WJ;Chin, A;Tsai, C
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