完整後設資料紀錄
DC 欄位語言
dc.contributor.authorHuang, CPen_US
dc.contributor.authorChen, Cen_US
dc.contributor.authorLiu, CYen_US
dc.contributor.authorLin, SSen_US
dc.contributor.authorChen, KHen_US
dc.date.accessioned2014-12-08T15:18:20Z-
dc.date.available2014-12-08T15:18:20Z-
dc.date.issued2005-10-01en_US
dc.identifier.issn0884-2914en_US
dc.identifier.urihttp://dx.doi.org/10.1557/JMR.2005.0334en_US
dc.identifier.urihttp://hdl.handle.net/11536/13221-
dc.description.abstractNickel has been widely used as an under-bump metallization (UBM) material in the microelectronics industry. The solid-state reaction between the eutectic SnAg solder bumps and three thicknesses of Ni/Cu UBM was investigated, with 5 mu m-Cu/3 mu m-Ni, 3 mu m-Cu/2 mu m-Ni, and 0 mu m-Cu/1 mu m-Ni. It was found that the shear strength of the solder bumps decreased after the solid-state aging at 150 degrees C for 200 h, and it did not change much after it was prolonged for 500 and 1000 h. Aging of the Ag3Sn intermetallic compound (IMC) and grain growth of the solder are responsible for the decrease in the shear strength. Furthermore, the shear test results indicated that the fracture mode switched from ductile to brittle for the solder bumps with 1 mu m Ni after aging longer than 200 h, causing the strength of the solder to decrease abruptly. This is attributed to the consumption of the peripheral Ni layer after the solid-state aging for 1000 It. The Ni consumption rate was measured to be 0.02 mu m/h(1/2) at 150 degrees C.en_US
dc.language.isoen_USen_US
dc.titleMetallurgical reactions of Sn-3.5Ag solder with various thicknesses of electroplated Ni/Cu under bump metallizationen_US
dc.typeArticleen_US
dc.identifier.doi10.1557/JMR.2005.0334en_US
dc.identifier.journalJOURNAL OF MATERIALS RESEARCHen_US
dc.citation.volume20en_US
dc.citation.issue10en_US
dc.citation.spage2772en_US
dc.citation.epage2779en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000232459000024-
dc.citation.woscount9-
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