Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 孟心飛 | en_US |
| dc.contributor.author | 冉曉雯 | en_US |
| dc.contributor.author | 趙宇強 | en_US |
| dc.contributor.author | 洪勝富 | en_US |
| dc.contributor.author | 陳兆軒 | en_US |
| dc.contributor.author | 鄭羽? | en_US |
| dc.contributor.author | 張哲豪 | en_US |
| dc.date.accessioned | 2016-12-20T05:04:14Z | - |
| dc.date.available | 2016-12-20T05:04:14Z | - |
| dc.date.issued | 2016-01-16 | en_US |
| dc.identifier.govdoc | H01L021/336 | zh_TW |
| dc.identifier.govdoc | H01L021/28 | zh_TW |
| dc.identifier.uri | http://hdl.handle.net/11536/132241 | - |
| dc.description.abstract | 一種電晶體之製法，係先提供一基材與一承載件，該基材上形成有絕緣層，該絕緣層具有複數外露該基材之通道，且該絕緣層上形成有導體層，又該承載件之表面上形成有流體包覆材料；接著，將該基材設於該承載件上，使該導體層接觸該流體包覆材料，之後再移動該基材，使該基材遠離該承載件，以令該流體包覆材料擴散包覆該導體層，待該導體層完全離開該承載件上之流體包覆材料之表面後，使該導體層上之流體包覆材料作為包覆層，故藉由控制該流體包覆材料之濃度及該基材之上升速度，以決定該包覆層的成形範圍，因而可避免成膜厚度太薄之問題。 | zh_TW |
| dc.language.iso | zh_TW | en_US |
| dc.title | 電晶體之製法 | zh_TW |
| dc.type | Patents | en_US |
| dc.citation.patentcountry | TWN | zh_TW |
| dc.citation.patentnumber | 201603143 | zh_TW |
| Appears in Collections: | Patents | |
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