Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 張翼 | en_US |
| dc.contributor.author | 林岳欽 | en_US |
| dc.contributor.author | 謝廷恩 | en_US |
| dc.date.accessioned | 2016-12-20T05:04:21Z | - |
| dc.date.available | 2016-12-20T05:04:21Z | - |
| dc.date.issued | 2016-05-16 | en_US |
| dc.identifier.govdoc | H01L029/778 | zh_TW |
| dc.identifier.govdoc | H01L021/28 | zh_TW |
| dc.identifier.uri | http://hdl.handle.net/11536/132275 | - |
| dc.description.abstract | 本發明提供一種高電子遷移率電晶體，以閘極掘入結構搭配高介電常數氧化層以及氮化物介面鈍化層，具有高臨界電壓、高轉導、高穩定之汲極輸出電流以及高可靠度等特性及優點。 | zh_TW |
| dc.language.iso | zh_TW | en_US |
| dc.title | 高電子遷移率電晶體及其製造方法 | zh_TW |
| dc.type | Patents | en_US |
| dc.citation.patentcountry | TWN | zh_TW |
| dc.citation.patentnumber | 201618304 | zh_TW |
| Appears in Collections: | Patents | |
Files in This Item:
If it is a zip file, please download the file and unzip it, then open index.html in a browser to view the full text content.