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dc.contributor.author李?宇en_US
dc.contributor.author鄒安傑en_US
dc.contributor.author郭浩中en_US
dc.contributor.author張俊彥en_US
dc.date.accessioned2016-12-20T05:04:25Z-
dc.date.available2016-12-20T05:04:25Z-
dc.date.issued2016-08-01en_US
dc.identifier.govdocH01L029/778zh_TW
dc.identifier.govdocH01L021/22zh_TW
dc.identifier.urihttp://hdl.handle.net/11536/132299-
dc.description.abstract本發明係提供一種高速電晶體,包括基板、形成於該基板上方的超晶格結構以及形成於該超晶格結構上的磊晶層。該高速電晶體使用具有碳摻雜的氮化鋁/氮化鎵的超晶格結構作為磊晶層與基板之間的結構,而能有效減少垂直漏電流,進而能夠提昇磊晶品質及高速電晶體之崩潰電壓。zh_TW
dc.language.isozh_TWen_US
dc.title高速電晶體zh_TW
dc.typePatentsen_US
dc.citation.patentcountryTWNzh_TW
dc.citation.patentnumber201628191zh_TW
Appears in Collections:Patents


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