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dc.contributor.author簡昭欣en_US
dc.contributor.author周承翰en_US
dc.contributor.author鍾政庭en_US
dc.contributor.author潘正聖en_US
dc.date.accessioned2016-12-20T05:04:28Z-
dc.date.available2016-12-20T05:04:28Z-
dc.date.issued2016-10-16en_US
dc.identifier.govdocH01L029/41zh_TW
dc.identifier.urihttp://hdl.handle.net/11536/132319-
dc.description.abstract一半導體裝置包含至少一鰭。該鰭設置於一半導體基板的一表面上。該鰭包含沿著一第一方向延伸的一主要部分,以及至少一次要部分,其沿著一第二方向自該主要部分向外延伸,該第一方向與第二方向並非同一直線。zh_TW
dc.language.isozh_TWen_US
dc.title具有結構強度較強的鰭之鰭式場效電晶體半導體裝置zh_TW
dc.typePatentsen_US
dc.citation.patentcountryTWNzh_TW
dc.citation.patentnumber201637199zh_TW
Appears in Collections:Patents


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