Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 張俊彥 | en_US |
| dc.contributor.author | 李?宇 | en_US |
| dc.contributor.author | 郭浩中 | en_US |
| dc.date.accessioned | 2016-12-20T05:04:30Z | - |
| dc.date.available | 2016-12-20T05:04:30Z | - |
| dc.date.issued | 2016-12-16 | en_US |
| dc.identifier.govdoc | H01L021/8252 | zh_TW |
| dc.identifier.govdoc | H01L021/324 | zh_TW |
| dc.identifier.govdoc | H01L021/20 | zh_TW |
| dc.identifier.uri | http://hdl.handle.net/11536/132334 | - |
| dc.description.abstract | 一種半導體元件的製備方法，包含以下步驟：(a)準備一由III族元素材料構成的半導體基板；(b)對該半導體基板加熱並於其上形成一緩衝單元，該緩衝單元包括一層以物理氣相沉積法沉積於該半導體基板的氮化鋁緩衝薄膜；(c)以化學氣相沉積法於該緩衝單元上沉積一半導體單元，該半導體單元包括一具有六角結晶結構的氮化鎵磊晶層。 | zh_TW |
| dc.language.iso | zh_TW | en_US |
| dc.title | 半導體元件的製備方法 | zh_TW |
| dc.type | Patents | en_US |
| dc.citation.patentcountry | TWN | zh_TW |
| dc.citation.patentnumber | 201644008 | zh_TW |
| Appears in Collections: | Patents | |
Files in This Item:
If it is a zip file, please download the file and unzip it, then open index.html in a browser to view the full text content.