標題: An interfacial investigation of high-dielectric constant material hafnium oxide on Si substrate
作者: Chen, SC
Lou, JC
Chien, CH
Liu, PT
Chang, TC
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: dielectrics;electrical properties and measurements;surface and interface state;transmission electron microscopy (TEM)
公開日期: 22-Sep-2005
摘要: In this study, the hump in the capacitance-voltage (C-V) curves, variation of leakage current, interfacial layer increase, and electron trapping in non-surface treated hafnium oxide (HfO2) samples were observed and investigated. From the results of the investigation, it was found that both rapid thermal oxidation and NH3 surface treatments improved the C-V curves. In addition, it was observed that samples treated with ammonia exhibited a lower leakage current when compared with the others. From the results of the dielectric, leakage current study, a severe electron trapping effect was exhibited under higher electric field stress. Finally, the conduction mechanism in the HfO2 thin film was dominated by Frenkel-Poole emission in a high electric field. (c) 2005 Elsevier B.V All rights reserved.
URI: http://dx.doi.org/10.1016/j.tsf.2005.01.023
http://hdl.handle.net/11536/13253
ISSN: 0040-6090
DOI: 10.1016/j.tsf.2005.01.023
期刊: THIN SOLID FILMS
Volume: 488
Issue: 1-2
起始頁: 167
結束頁: 172
Appears in Collections:Conferences Paper


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