標題: Magneto-transport flipping induced by surface oxidation in Co films
作者: Chung, T. Y.
Hsu, S. Y.
電子物理學系
Department of Electrophysics
公開日期: 2009
摘要: We have performed low temperature magnetoresistance (MR) and magnetization measurements for a series of thin Co films with different degrees of oxidation to investigate the role of surface oxidation on magnetic properties. For films with less oxidation, magneto-transport exhibits the typical anisotropic magnetoresistance behavior. However, magneto-transport flips completely in films with severe oxidation. The inverse MR is replaced by the normal MR when the applied magnetic field is a long the current. The normal MR is changed to the inverse MR when the applied magnetic field is perpendicular to the current. Since the disorder will enhance the spin-orbital interaction and electron-electron interaction in thin films, we suggest that both mechanisms may be responsible for the flipping in anisotropic MR induced by surface oxidation.
URI: http://hdl.handle.net/11536/13256
http://dx.doi.org/10.1088/1742-6596/150/4/042063
ISSN: 1742-6588
DOI: 10.1088/1742-6596/150/4/042063
期刊: 25TH INTERNATIONAL CONFERENCE ON LOW TEMPERATURE PHYSICS (LT25), PART 4: QUANTUM PHASE TRANSITIONS AND MAGNETISM
Volume: 150
Appears in Collections:Conferences Paper


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