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dc.contributor.authorHsu, Chih-Kaien_US
dc.contributor.authorLin, Chi-Yien_US
dc.contributor.authorLi, Wenwuen_US
dc.contributor.authorSun, Huabinen_US
dc.contributor.authorXu, Yongen_US
dc.contributor.authorHu, Zhigaoen_US
dc.contributor.authorChang, Yuan-Mingen_US
dc.contributor.authorSuen, Yuen-Wuuen_US
dc.contributor.authorLin, Yen-Fuen_US
dc.date.accessioned2017-04-21T06:56:49Z-
dc.date.available2017-04-21T06:56:49Z-
dc.date.issued2016-12en_US
dc.identifier.issn2053-1583en_US
dc.identifier.urihttp://dx.doi.org/10.1088/2053-1583/3/4/045015en_US
dc.identifier.urihttp://hdl.handle.net/11536/132596-
dc.description.abstractElectrical contacts made of conducting channels with external circuitry significantly impact electronic performances, in particular for two-dimensional semiconductors. This work presents a systematic study of back-to-back Schottky contacts to a layered compound of semiconducting flakes through static and dynamic electrical measurements and the first demonstration of Schottky barrier-dominated, p-type PbSnS2 field-effect transistors. In the static analysis, the Schottky barrier height of the layered transistors can be modulated by applied electrostatic fields, while the contact-dominated fluctuations render to the 1/f electric noise and induce a normalized noise amplitude in the order of 10(-9)-10(-8). Such an ultralow-noise amplitude, which is never observed in other layered semiconducting transistors, is ascribed to the existence of Schottky barriers. Our experimental results provide a nuanced perspective for advancing the understanding of performance limit with increasing numbers of layers for electronic development.en_US
dc.language.isoen_USen_US
dc.subjectlayered electronicsen_US
dc.subjectPbSnS2en_US
dc.subjectelectrical contactsen_US
dc.subjectlow-frequency noiseen_US
dc.subjectnoise amplitudeen_US
dc.titleThe impact of electrical contacts and contact-induced ultralow noise amplitudes in layered transistorsen_US
dc.identifier.doi10.1088/2053-1583/3/4/045015en_US
dc.identifier.journal2D MATERIALSen_US
dc.citation.volume3en_US
dc.citation.issue4en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000386627200001en_US
Appears in Collections:Articles