標題: Nanometer scale fabrication and optical response of InGaN/GaN quantum disks
作者: Lai, Yi-Chun
Higo, Akio
Kiba, Takayuki
Thomas, Cedric
Chen, Shula
Lee, Chang Yong
Tanikawa, Tomoyuki
Kuboya, Shigeyuki
Katayama, Ryuji
Shojiki, Kanako
Takayama, Junichi
Yamashita, Ichiro
Murayama, Akihiro
Chi, Gou-Chung
Yu, Peichen
Samukawa, Seiji
光電工程學系
Department of Photonics
關鍵字: quantum disks;neutral beam etch;bio-template;InGaN/GaN;single quantum well
公開日期: 21-Oct-2016
摘要: In this work, we demonstrate homogeneously distributed In0.3Ga0.7N/GaN quantum disks (QDs), with an average diameter below 10 nm and a high density of 2.1 x 10(11) cm(-2), embedded in 20 nm tall nanopillars. The scalable top-down fabrication process involves the use of self-assembled ferritin bio-templates as the etch mask, spin coated on top of a strained In0.3Ga0.7N/GaN single quantum well (SQW) structure, followed by a neutral beam etch (NBE) method. The small dimensions of the iron cores inside ferritin and nearly damage-free process enabled by the NBE jointly contribute to the observation of photoluminescence (PL) from strain-relaxed In0.3Ga0.7N/GaN QDs at 6 K. The large blueshift of the peak wavelength by over 70 nm manifests a strong reduction of the quantum-confined Stark effect (QCSE) within the QD structure, which also agrees well with the theoretical prediction using a 3D Schrodinger equation solver. The current results hence pave the way towards the realization of large-scale III-N quantum structures using the combination of bio-templates and NBE, which is vital for the development of next-generation lighting and communication devices.
URI: http://dx.doi.org/10.1088/0957-4484/27/42/425401
http://hdl.handle.net/11536/132626
ISSN: 0957-4484
DOI: 10.1088/0957-4484/27/42/425401
期刊: NANOTECHNOLOGY
Volume: 27
Issue: 42
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