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dc.contributor.authorKo, Ting-Yuen_US
dc.contributor.authorShellaiah, Muthaiahen_US
dc.contributor.authorSun, Kien Wenen_US
dc.date.accessioned2019-04-03T06:39:44Z-
dc.date.available2019-04-03T06:39:44Z-
dc.date.issued2016-10-07en_US
dc.identifier.issn2045-2322en_US
dc.identifier.urihttp://dx.doi.org/10.1038/srep35086en_US
dc.identifier.urihttp://hdl.handle.net/11536/132643-
dc.description.abstractIn this study, we measured the thermal conductivity and Seebeck coefficient of single Sb2Se3 nanowires and nanowire bundles with a high resistivity (sigma similar to 4.37 x 10(-4) S/m). Microdevices consisting of two adjacent suspended silicon nitride membranes were fabricated to measure the thermal transport properties of the nanowires in vacuum. Single Sb2Se3 nanowires with different diameters and nanowire bundles were carefully placed on the device to bridge the two membranes. The relationship of temperature difference on each heating/sensing suspension membranes with joule heating was accurately determined. A single Sb2Se3 nanowire with a diameter of similar to 680 nm was found to have a thermal conductivity (k(NW)) of 0.037 +/- 0.002 W/m.K. The thermal conductivity of the nanowires is more than an order of magnitude lower than that of bulk materials (k similar to 0.36-1.9 W/m.K) and highly conductive (sigma similar to 3 x 10(4) S/m) Sb2Se3 single nanowires (k similar to 1 W/m.K). The measured Seebeck coefficient with a positive value of similar to 661 mu V/K is comparable to that of highly conductive Sb2Se3 single nanowires (similar to 750 mu V/K). The thermal transport between wires with different diameters and nanowire bundles was compared and discussed.en_US
dc.language.isoen_USen_US
dc.titleThermal and Thermoelectric Transport in Highly Resistive Single Sb2Se3 Nanowires and Nanowire Bundlesen_US
dc.typeArticleen_US
dc.identifier.doi10.1038/srep35086en_US
dc.identifier.journalSCIENTIFIC REPORTSen_US
dc.citation.volume6en_US
dc.citation.spage0en_US
dc.citation.epage0en_US
dc.contributor.department應用化學系zh_TW
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Applied Chemistryen_US
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000384940000001en_US
dc.citation.woscount8en_US
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