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dc.contributor.authorTsai, Yu-Linen_US
dc.contributor.authorLai, Kun-Yuen_US
dc.contributor.authorLee, Ming-Juien_US
dc.contributor.authorLiao, Yu-Kuangen_US
dc.contributor.authorOoi, Boon S.en_US
dc.contributor.authorKuo, Hao-Chungen_US
dc.contributor.authorHe, Jr-Hauen_US
dc.date.accessioned2017-04-21T06:56:22Z-
dc.date.available2017-04-21T06:56:22Z-
dc.date.issued2016-09en_US
dc.identifier.issn0079-6727en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.pquantelec.2016.08.001en_US
dc.identifier.urihttp://hdl.handle.net/11536/132677-
dc.description.abstractPhoton management is essential in improving the performances of optoelectronic devices including light emitting diodes, solar cells and photo detectors. Beyond the advances in material growth and device structure design, photon management via nanoscaled phenomena have also been demonstrated as a promising way for further modifying/improving the device performance. The accomplishments achieved by photon management via nanoscaled phenomena include strain-induced polarization field management, crystal quality improvement, light extraction/harvesting enhancement, radiation pattern control, and spectrum management. In this review, we summarize recent development, challenges and underlying physics of photon management in GaN-based light emitting diodes and solar cells. (C) 2016 Elsevier Ltd. All rights reserved.en_US
dc.language.isoen_USen_US
dc.titlePhoton management of GaN-based optoelectronic devices via nanoscaled phenomenaen_US
dc.identifier.doi10.1016/j.pquantelec.2016.08.001en_US
dc.identifier.journalPROGRESS IN QUANTUM ELECTRONICSen_US
dc.citation.volume49en_US
dc.citation.spage1en_US
dc.citation.epage25en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000386983500001en_US
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