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dc.contributor.authorYang, Zu-Poen_US
dc.contributor.authorCheng, Hsyi-Enen_US
dc.contributor.authorChang, I-Hsuanen_US
dc.contributor.authorYu, Ing-Songen_US
dc.date.accessioned2019-04-03T06:39:34Z-
dc.date.available2019-04-03T06:39:34Z-
dc.date.issued2016-08-01en_US
dc.identifier.issn2076-3417en_US
dc.identifier.urihttp://dx.doi.org/10.3390/app6080233en_US
dc.identifier.urihttp://hdl.handle.net/11536/132693-
dc.description.abstractTitanium oxide (TiO2) films and TiO2/SiNx stacks have potential in surface passivation, anti-reflection coatings and carrier-selective contact layers for crystalline Si solar cells. A Si wafer, deposited with 8-nm-thick TiO2 film by atomic layer deposition, has a surface recombination velocity as low as 14.93 cm/s at the injection level of 1.0 x 1015 cm(-3). However, the performance of silicon surface passivation of the deposited TiO2 film declines as its thickness increases, probably because of the stress effects, phase transformation, atomic hydrogen and thermal stability of amorphous TiO2 films. For the characterization of 66-nm-thick TiO2 film, the results of transmission electron microscopy show that the anatase TiO2 crystallinity forms close to the surface of the Si. Secondary ion mass spectrometry shows the atomic hydrogen at the interface of TiO2 and Si which serves for chemical passivation. The crystal size of anatase TiO2 and the homogeneity of TiO2 film can be deduced by the measurements of Raman spectroscopy and spectroscopic ellipsometry, respectively. For the passivating contacts of solar cells, in addition, a stack composed of 8-nm-thick TiO2 film and a plasma-enhanced chemical-vapor-deposited 72-nm-thick SiNx layer has been investigated. From the results of the measurement of the reflectivity and effective carrier lifetime, TiO2/SiNx stacks on Si wafers perform with low reflectivity and some degree of surface passivation for the Si wafer.en_US
dc.language.isoen_USen_US
dc.subjecttitanium oxideen_US
dc.subjectatomic layer depositionen_US
dc.subjectanataseen_US
dc.subjectsurface passivationen_US
dc.subjectantireflection coatingen_US
dc.subjectcarrier selective contacten_US
dc.subjectsilicon solar cellen_US
dc.titleAtomic Layer Deposition TiO2 Films and TiO2/SiNx Stacks Applied for Silicon Solar Cellsen_US
dc.typeArticleen_US
dc.identifier.doi10.3390/app6080233en_US
dc.identifier.journalAPPLIED SCIENCES-BASELen_US
dc.citation.volume6en_US
dc.citation.issue8en_US
dc.citation.spage0en_US
dc.citation.epage0en_US
dc.contributor.department光電系統研究所zh_TW
dc.contributor.departmentInstitute of Photonic Systemen_US
dc.identifier.wosnumberWOS:000385517300027en_US
dc.citation.woscount7en_US
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