Low-Leakage Bidirectional SCR With Symmetrical Trigger Circuit for ESD Protection in 40-nm CMOS Process

doi:10.1109/TDMR.2016.2600276

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Altolaguirre, Federico A.	en_US
dc.contributor.author	Ker, Ming-Dou	en_US
dc.date.accessioned	2017-04-21T06:56:27Z	-
dc.date.available	2017-04-21T06:56:27Z	-
dc.date.issued	2016-12	en_US
dc.identifier.issn	1530-4388	en_US
dc.identifier.uri	http://dx.doi.org/10.1109/TDMR.2016.2600276	en_US
dc.identifier.uri	http://hdl.handle.net/11536/132756	-
dc.description.abstract	This paper presents a novel bidirectional electrostatic discharge protection device based on a dual silicon-controlled rectifier with a symmetrical trigger circuit. The proposed device has been realized and verified in a 40-nm CMOS process, which can pass a 3.75-kV HBMand a 250-VMM with a very low standby leakage current of similar to 27 nA at 25 degrees C and a bias voltage of 0.9 V with a silicon footprint of only 13 mu m x 100 mu m.	en_US
dc.language.iso	en_US	en_US
dc.subject	Electrostatic Discharge (ESD) Protection	en_US
dc.subject	silicon-controlled rectifier (SCR)	en_US
dc.subject	bidirectional SCR	en_US
dc.subject	mixed voltage	en_US
dc.title	Low-Leakage Bidirectional SCR With Symmetrical Trigger Circuit for ESD Protection in 40-nm CMOS Process	en_US
dc.identifier.doi	10.1109/TDMR.2016.2600276	en_US
dc.identifier.journal	IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY	en_US
dc.citation.volume	16	en_US
dc.citation.issue	4	en_US
dc.citation.spage	549	en_US
dc.citation.epage	555	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000389852400019	en_US
顯示於類別：	期刊論文