標題: | SCR device with double-triggered technique for on-chip ESD protection in sub-quarter-micron silicided CMOS processes |
作者: | Ker, MD Hsu, KC 電機學院 College of Electrical and Computer Engineering |
關鍵字: | double-triggered technique;electrostatic discharge (ESD);ESD protection circuit;silicon-controlled rectifier (SCR) |
公開日期: | 1-九月-2003 |
摘要: | Turn-on efficiency is the main concern for silicon-controlled rectifier (SCR) devices used as on-chip electrostatic discharge (ESD) protection circuit, especially in deep sub-quarter-micron CMOS processes with much thinner gate oxide. A novel double-triggered technique is proposed to speed up the turn-on speed of SCR devices for using in on-chip ESD protection circuit to effectively protect the much thinner gate oxide in sub-quarter-micron CMOS processes. From the experimental results, the switching voltage and turn-on time of such double-triggered SCR (DT_SCR) device has been confirmed to be significantly reduced by this double-triggered technique. |
URI: | http://dx.doi.org/10.1109/TDMR.2003.815192 http://hdl.handle.net/11536/27557 |
ISSN: | 1530-4388 |
DOI: | 10.1109/TDMR.2003.815192 |
期刊: | IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY |
Volume: | 3 |
Issue: | 3 |
起始頁: | 58 |
結束頁: | 68 |
顯示於類別: | 期刊論文 |