標題: | Overview of on-chip electrostatic discharge protection design with SCR-based devices in CMOS integrated circuits |
作者: | Ker, MD Hsu, KC 電機學院 College of Electrical and Computer Engineering |
關鍵字: | electrostatic discharge (ESD);ESD protection circuits;latchup;silicon controlled rectifier (SCR) |
公開日期: | 1-六月-2005 |
摘要: | An overview on the electrostatic discharge (ESD) protection circuits by using the silicon controlled rectifier (SCR)-based devices in CMOS ICs is presented. The history and evolution of SCR device used for on-chip ESD protection is introduced. Moreover, two practical problems (higher switching voltage and transient-induced latchup issue) limiting the use of SCR-based devices in on-chip ESD protection are reported. Some modified device structures and trigger-assist circuit techniques to reduce the switching voltage of SCR-based devices are discussed. The solutions to overcome latchup issue in the SCR-based devices are also discussed to safely apply the SCR-based devices for on-chip ESD protection in CMOS IC products. |
URI: | http://dx.doi.org/10.1109/TDMR.2005.846824 http://hdl.handle.net/11536/13611 |
ISSN: | 1530-4388 |
DOI: | 10.1109/TDMR.2005.846824 |
期刊: | IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY |
Volume: | 5 |
Issue: | 2 |
起始頁: | 235 |
結束頁: | 249 |
顯示於類別: | 期刊論文 |