標題: | Substrate-triggered SCR device for on-chip ESD protection in fully silicided sub-0.25-mu m CMOS process |
作者: | Ker, MD Hsu, KC 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
關鍵字: | electrostatic discharge (ESD);ESD protection circuit;silicon controlled rectifier (SCR);substrate-triggered technique |
公開日期: | 1-二月-2003 |
摘要: | The turn-on mechanism of a silicon-controlled rectifier (SCR) device is essentially a current triggering event. While a current is applied to the, base or - substrate of the SCR device, it can be quickly triggered, into its latching state. In this paper, a novel design concept to turn on the SCR device by applying the substrate-triggered technique is first proposed for effective on-chip electrostatic discharge (ESD) protection. This novel substrate-triggered SCR device has the advantages of controllable switching voltage and adjustable holding voltage and is compatible with, general CMOS processes without extra process modification such as the silicide-blocking mask and ESD implantation. Moreover, the substrate-triggered SCR, devices can be stacked in ESD protection circuits to avoid the translient-induced latch-up issue. The turn-on time of the proposed substrate-triggered SCR devices, can be reduced from 27.4 to 7.8 ns by the substrate-triggering, technique. The substrate-triggered SCR device with a small active area of only 20 mum x 20 mum can sustain the HBM ESD stress of 6.5 kV in a fully silicided 0.25-mum CMOS process. |
URI: | http://dx.doi.org/10.1109/TED.2003.809028 http://hdl.handle.net/11536/28113 |
ISSN: | 0018-9383 |
DOI: | 10.1109/TED.2003.809028 |
期刊: | IEEE TRANSACTIONS ON ELECTRON DEVICES |
Volume: | 50 |
Issue: | 2 |
起始頁: | 397 |
結束頁: | 405 |
顯示於類別: | 期刊論文 |