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dc.contributor.authorKer, MDen_US
dc.contributor.authorHsu, KCen_US
dc.date.accessioned2014-12-08T15:41:19Z-
dc.date.available2014-12-08T15:41:19Z-
dc.date.issued2003-02-01en_US
dc.identifier.issn0018-9383en_US
dc.identifier.urihttp://dx.doi.org/10.1109/TED.2003.809028en_US
dc.identifier.urihttp://hdl.handle.net/11536/28113-
dc.description.abstractThe turn-on mechanism of a silicon-controlled rectifier (SCR) device is essentially a current triggering event. While a current is applied to the, base or - substrate of the SCR device, it can be quickly triggered, into its latching state. In this paper, a novel design concept to turn on the SCR device by applying the substrate-triggered technique is first proposed for effective on-chip electrostatic discharge (ESD) protection. This novel substrate-triggered SCR device has the advantages of controllable switching voltage and adjustable holding voltage and is compatible with, general CMOS processes without extra process modification such as the silicide-blocking mask and ESD implantation. Moreover, the substrate-triggered SCR, devices can be stacked in ESD protection circuits to avoid the translient-induced latch-up issue. The turn-on time of the proposed substrate-triggered SCR devices, can be reduced from 27.4 to 7.8 ns by the substrate-triggering, technique. The substrate-triggered SCR device with a small active area of only 20 mum x 20 mum can sustain the HBM ESD stress of 6.5 kV in a fully silicided 0.25-mum CMOS process.en_US
dc.language.isoen_USen_US
dc.subjectelectrostatic discharge (ESD)en_US
dc.subjectESD protection circuiten_US
dc.subjectsilicon controlled rectifier (SCR)en_US
dc.subjectsubstrate-triggered techniqueen_US
dc.titleSubstrate-triggered SCR device for on-chip ESD protection in fully silicided sub-0.25-mu m CMOS processen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/TED.2003.809028en_US
dc.identifier.journalIEEE TRANSACTIONS ON ELECTRON DEVICESen_US
dc.citation.volume50en_US
dc.citation.issue2en_US
dc.citation.spage397en_US
dc.citation.epage405en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000182496000020-
dc.citation.woscount23-
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