完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Ker, MD | en_US |
dc.contributor.author | Hsu, KC | en_US |
dc.date.accessioned | 2014-12-08T15:41:19Z | - |
dc.date.available | 2014-12-08T15:41:19Z | - |
dc.date.issued | 2003-02-01 | en_US |
dc.identifier.issn | 0018-9383 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1109/TED.2003.809028 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/28113 | - |
dc.description.abstract | The turn-on mechanism of a silicon-controlled rectifier (SCR) device is essentially a current triggering event. While a current is applied to the, base or - substrate of the SCR device, it can be quickly triggered, into its latching state. In this paper, a novel design concept to turn on the SCR device by applying the substrate-triggered technique is first proposed for effective on-chip electrostatic discharge (ESD) protection. This novel substrate-triggered SCR device has the advantages of controllable switching voltage and adjustable holding voltage and is compatible with, general CMOS processes without extra process modification such as the silicide-blocking mask and ESD implantation. Moreover, the substrate-triggered SCR, devices can be stacked in ESD protection circuits to avoid the translient-induced latch-up issue. The turn-on time of the proposed substrate-triggered SCR devices, can be reduced from 27.4 to 7.8 ns by the substrate-triggering, technique. The substrate-triggered SCR device with a small active area of only 20 mum x 20 mum can sustain the HBM ESD stress of 6.5 kV in a fully silicided 0.25-mum CMOS process. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | electrostatic discharge (ESD) | en_US |
dc.subject | ESD protection circuit | en_US |
dc.subject | silicon controlled rectifier (SCR) | en_US |
dc.subject | substrate-triggered technique | en_US |
dc.title | Substrate-triggered SCR device for on-chip ESD protection in fully silicided sub-0.25-mu m CMOS process | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1109/TED.2003.809028 | en_US |
dc.identifier.journal | IEEE TRANSACTIONS ON ELECTRON DEVICES | en_US |
dc.citation.volume | 50 | en_US |
dc.citation.issue | 2 | en_US |
dc.citation.spage | 397 | en_US |
dc.citation.epage | 405 | en_US |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:000182496000020 | - |
dc.citation.woscount | 23 | - |
顯示於類別: | 期刊論文 |