SCR device with double-triggered technique for on-chip ESD protection in sub-quarter-micron silicided CMOS processes

Abstract

Turn-on efficiency is the main concern for silicon-controlled rectifier (SCR) devices used as on-chip electrostatic discharge (ESD) protection circuit, especially in deep sub-quarter-micron CMOS processes with much thinner gate oxide. A novel double-triggered technique is proposed to speed up the turn-on speed of SCR devices for using in on-chip ESD protection circuit to effectively protect the much thinner gate oxide in sub-quarter-micron CMOS processes. From the experimental results, the switching voltage and turn-on time of such double-triggered SCR (DT_SCR) device has been confirmed to be significantly reduced by this double-triggered technique.